DI012P03SQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI012P03SQ MOSFET, SO-8, P, -30V, -12A, 13.5mΩ, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI012P03SQ

Type	SMD
Package	SO-8
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-30 V

Drain current 25°C	ID	-12.000 A
On-resistance 1	RDSon1	0.01350 Ω
	@ ID	-10.000 A
	@ VGS	-10 V
Drain current 100°C	ID	-10.500 A
On-resistance 2	RDSon2	0.01600 Ω
	@ ID	-7.000 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	5.600 W
	@ TLoc	25 °C
	Location	Terminal
Avalanche	No
Peak drain current	IDM	-40.000 A
	@ tp	100 µs
Threshold voltage	VGSth min	-1.0 V
	VGSth max	-2.5 V
Turn-on delay time	tD(on)	10 ns
Rise time	tr	11 ns
Turn-off delay time	tD(off)	30 ns
Fall time	tf	7 ns
Total gate charge (10V)	Qg (10V)	62.0 nC
Total gate charge (4.5V)	Qg (4.5V)	31.0 nC
Gate-drain charge	Qgd	10 nC
Single pulse avalanche energy	Eas	20.0 mJ
Input capacitance	Ciss	1930 pF
Output capacitance	Coss	360 pF
Reverse transfer capacitance	Crss	312 pF
Reverse recovery charge	Qrr	40.0 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	50 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	12 V
Drain source leakage current	IDSS	1 µA
	@ VDS	16 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	23 mA/V
Intrinsic gate resistance	RGi	2.5 Ω