DI011N06PQK
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI011N06PQK MOSFET, PowerQFN 5x6, N, 60V, 11A,
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI011N06PQK

Type	SMD
Package	PowerQFN 5x6
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	Yes
Polarity	pol	N
Drain source voltage	VDS	60 V

Drain current 25°C	ID	11 A
On-resistance 1	RDSon1	0.01 Ω
	@ ID	11 A
	@ VGS	10 V
Drain current 100°C	ID	7 A
On-resistance 2	RDSon2	0.019 Ω
	@ ID	9 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	34 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	44 A
	@ tp	10000 µs
Threshold voltage	VGSth min	1 V
	VGSth max	1.8 V
Turn-on delay time	tD(on)	tbd ns
Rise time	tr	0 ns
Turn-off delay time	tD(off)	tbd ns
Fall time	tf	0 ns
Total gate charge (10V)	Qg (10V)	tbd nC
Total gate charge (4.5V)	Qg (4.5V)	tbd nC
Gate-drain charge	Qgd	tbd nC
Single pulse avalanche energy	Eas	tbd mJ
Input capacitance	Ciss	tbd pF
Output capacitance	Coss	tbd pF
Reverse transfer capacitance	Crss	tbd pF
Reverse recovery charge	Qrr	tbd nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	3.6 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	46 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	60 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	tbd mA/V
Intrinsic gate resistance	RGi	tbd Ω