DI007C04SQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI007C04SQ Complementary MOSFET MOSFET, SO-8, N+P, 40V, 7A, 24mΩ, 150°C
Minimum order quantity	4.000
Stock	4.000
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	No
Halogen free	No

Article number	DI007C04SQ

Type	SMD
Package	SO-8
Qualification	Industrial Grade
Config	Dual
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N+P
Drain source voltage	VDS	40 V

Drain current 25°C	ID	7 A
On-resistance 1	RDSon1	0.024 Ω
	@ ID	6 A
	@ VGS	10 V
Drain current 100°C	ID	5.6 A
On-resistance 2	RDSon2	0.055 Ω
	@ ID	-4 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	1.8 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	Yes
Peak drain current	IDM	14 A
	@ tp	null µs
Threshold voltage	VGSth min	1.4 V
	VGSth max	2.4 V
Turn-on delay time	tD(on)	5 ns
Rise time	tr	7 ns
Turn-off delay time	tD(off)	15 ns
Fall time	tf	5 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	8.8 nC
Gate-drain charge	Qgd	2.5 nC
Single pulse avalanche energy	Eas	20 mJ
Input capacitance	Ciss	1060 pF
Output capacitance	Coss	84 pF
Reverse transfer capacitance	Crss	58 pF
Reverse recovery charge	Qrr	4.2 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	11.8 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	71 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	40 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	null mA/V
Intrinsic gate resistance	RGi	1.6 Ω