DI004N06PWK
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI004N06PWK MOSFET, PowerQFN 2x2, N, 60V, 4A, 57mΩ, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI004N06PWK

Type	SMD
Package	PowerQFN 2x2
Qualification	Industrial Grade
Config	Single Protected
Life Cycle	active
ESD sensitive	No
MSL	1

ESD protection	ESD protected	Yes
Polarity	pol	N
Drain source voltage	VDS	60 V

Drain current 25°C	ID	4 A
On-resistance 1	RDSon1	0.057 Ω
	@ ID	4 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.07 Ω
	@ ID	3 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	1.65 W
	@ TLoc	25 °C
	Location
Avalanche	No
Peak drain current	IDM	16 A
	@ tp	10000 µs
Threshold voltage	VGSth min	1 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	5 ns
Rise time	tr	21 ns
Turn-off delay time	tD(off)	15 ns
Fall time	tf	23 ns
Total gate charge (10V)	Qg (10V)
Total gate charge (4.5V)	Qg (4.5V)
Gate-drain charge	Qgd	2 nC
Single pulse avalanche energy	Eas
Input capacitance	Ciss	651 pF
Output capacitance	Coss	28 pF
Reverse transfer capacitance	Crss	26 pF
Reverse recovery charge	Qrr	2.8 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.05 g
Marking	Marking	LR
Thermal resistance junction	RTH	76 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	16 V
Drain source leakage current	IDSS	1 µA
	@ VDS	48 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	6 mA/V
Intrinsic gate resistance	RGi	null Ω