MMFTP84KT
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTP84KT
MOSFET, SOT-723, P, -60V, -0.26A, 6Ω, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Distributor Availability

Technical data

Article number MMFTP84KT
MMFTP84KT Single Protected
Type SMD
Package SOT-523
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol P
Drain source voltage VDS -60 V
Drain current 25°C ID -0.260 A
On-resistance 1 RDSon1 6.00000
@ ID -0.200 A
@ VGS -10 V
Drain current 100°C ID -0.160 A
On-resistance 2 RDSon2 7.00000
@ ID -0.100 A
@ VGS -2.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 0.270 W
@ TLoc 25 °C
Location Junction
Avalanche No
Peak drain current IDM 1.040 A
@ tp 100 µs
Threshold voltage VGSth min -1.0 V
VGSth max -2.0 V
Turn-on delay time tD(on) 8 ns
Rise time tr 4 ns
Turn-off delay time tD(off) 39 ns
Fall time tf 20 ns
Total gate charge (10V) Qg (10V) 2.2 nC
Total gate charge (4.5V) Qg (4.5V) 0.0 nC
Gate-drain charge Qgd 0.4 nC
Single pulse avalanche energy Eas 0.0 mJ
Input capacitance Ciss 37 pF
Output capacitance Coss 6 pF
Reverse transfer capacitance Crss 6 pF
Reverse recovery charge Qrr 8.5 nC
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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