MMFTP3401
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTP3401
MOSFET, SOT-23, P, -30V, -4A, 65mΩ, 150°C
Minimum order quantity 3.000
Stock 1.113.000
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTP3401
MMFTP3401 Single
Type SMD
Package SOT-23
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -30 V
Drain current 25°C ID -4 A
On-resistance 1 RDSon1 0.065 Ω
@ ID -4 A
@ VGS -10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.075 Ω
@ ID -4 A
@ VGS -4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM -25 A
@ tp null µs
Threshold voltage VGSth min -0.7 V
VGSth max -1.3 V
Turn-on delay time tD(on) 6 ns
Rise time tr 3 ns
Turn-off delay time tD(off) 38 ns
Fall time tf 7 ns
Total gate charge (10V) Qg (10V) 17 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 954 pF
Output capacitance Coss 115 pF
Reverse transfer capacitance Crss 77 pF
Reverse recovery charge Qrr 7 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking R1
Thermal resistance junction RTH 250 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 12 V
Drain source leakage current IDSS 1 µA
@ VDS 24 V
Gate source voltage DC VGSS 12 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 7 mA/V
Intrinsic gate resistance RGi null Ω

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