MMFTP2319
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTP2319
MOSFET, SOT-23, P, -40V, -4.2A, 80mΩ, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTP2319
MMFTP2319 Single
Type SMD
Package SOT-23
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -40 V
Drain current 25°C ID -4.2 A
On-resistance 1 RDSon1 0.08 Ω
@ ID -3.1 A
@ VGS -10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.12 Ω
@ ID -2.6 A
@ VGS -4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 0.75 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM -30 A
@ tp null µs
Threshold voltage VGSth min 1 V
VGSth max 3 V
Turn-on delay time tD(on) 15 ns
Rise time tr 28 ns
Turn-off delay time tD(off) 19 ns
Fall time tf 4 ns
Total gate charge (10V) Qg (10V) null nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 2.6 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 1179 pF
Output capacitance Coss 82 pF
Reverse transfer capacitance Crss 40 pF
Reverse recovery charge Qrr 9 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking UJ
Thermal resistance junction RTH 100 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 40 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 7.6 mA/V
Intrinsic gate resistance RGi 4.6 Ω

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