MMFTN620KDW-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN620KDW-AQ
MOSFET, SOT-363, N+N, 60V, 0.35A, 2Ω, 150°C, AEC-Q101
Minimum order quantity 3.000
Stock 363.000
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTN620KDW-AQ
MMFTN620KDW-AQ Dual Protected
Type SMD
Package SOT-363
Qualification AEC-Q101
Config Dual Protected
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected Yes
Polarity pol N+N
Drain source voltage VDS 60 V
Drain current 25°C ID 0.35 A
On-resistance 1 RDSon1 2 Ω
@ ID 0.1 A
@ VGS 5 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 2.5 Ω
@ ID 0.05 A
@ VGS 2.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 0.2 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM 0.5 A
@ tp 100 µs
Threshold voltage VGSth min 0.5 V
VGSth max 1 V
Turn-on delay time tD(on) 13 ns
Rise time tr 13 ns
Turn-off delay time tD(off) 8 ns
Fall time tf 5 ns
Total gate charge (10V) Qg (10V) null nC
Total gate charge (4.5V) Qg (4.5V) 0.8 nC
Gate-drain charge Qgd 0 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 49 pF
Output capacitance Coss 10 pF
Reverse transfer capacitance Crss 8 pF
Reverse recovery charge Qrr 4 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking MH
Thermal resistance junction RTH 390 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 48 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS 2000 V
Forward transconductance gfs 0.7 mA/V
Intrinsic gate resistance RGi 38 Ω

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