MMFTN3479KW
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN3479KW Gate Protected
MOSFET, SOT-323, N, 20V, 3.5A, 64mΩ, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTN3479KW
MMFTN3479KW Single Protected
Type SMD
Package SOT-323
Qualification Industrial Grade
Config Single Protected
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 20 V
Drain current 25°C ID 3.5 A
On-resistance 1 RDSon1 0.064 Ω
@ ID 1.5 A
@ VGS 5 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.095 Ω
@ ID 1 A
@ VGS 2.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 0.9 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM 14 A
@ tp 10 µs
Threshold voltage VGSth min 0.4 V
VGSth max 1.3 V
Turn-on delay time tD(on) 3 ns
Rise time tr 3 ns
Turn-off delay time tD(off) 13 ns
Fall time tf 8 ns
Total gate charge (10V) Qg (10V) null nC
Total gate charge (4.5V) Qg (4.5V) 2.8 nC
Gate-drain charge Qgd 1 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 260 pF
Output capacitance Coss 65 pF
Reverse transfer capacitance Crss 65 pF
Reverse recovery charge Qrr null nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking Z39N
Thermal resistance junction RTH 139 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 60 V
Gate source voltage DC VGSS 12 V
Gate source voltage ESD VGSS 2000 V
Forward transconductance gfs 2.8 mA/V
Intrinsic gate resistance RGi null Ω

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