MMFTN340K
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN340K
MOSFET, SOT-23, N, 100V, 1A, 0.32Ω, 150°C
Minimum order quantity 3.000
Stock 21.000
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTN340K
MMFTN340K Single Protected
Type SMD
Package SOT-23
Qualification Industrial Grade
Config Single Protected
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 1 A
On-resistance 1 RDSon1 0.32 Ω
@ ID 1 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.34 Ω
@ ID 1 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM 4 A
@ tp null µs
Threshold voltage VGSth min 1 V
VGSth max 2.5 V
Turn-on delay time tD(on) 10 ns
Rise time tr 4 ns
Turn-off delay time tD(off) 8 ns
Fall time tf 13 ns
Total gate charge (10V) Qg (10V) 8.4 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 1 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 454 pF
Output capacitance Coss 17 pF
Reverse transfer capacitance Crss 13 pF
Reverse recovery charge Qrr 15 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking TG
Thermal resistance junction RTH 125 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 100 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS 2000 V
Forward transconductance gfs 4.1 mA/V
Intrinsic gate resistance RGi 0.9 Ω

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