MMFTN210A-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN210A-Q
MOSFET, SOT-23, N, 100V, 2A, 0.28Ω, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTN210A-Q
MMFTN210A-Q Single
Type SMD
Package SOT-23
Qualification AEC-Q compliant
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 2 A
On-resistance 1 RDSon1 0.28 Ω
@ ID 1 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.31 Ω
@ ID 1 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM 8 A
@ tp null µs
Threshold voltage VGSth min 1 V
VGSth max 2.5 V
Turn-on delay time tD(on) 10 ns
Rise time tr 4 ns
Turn-off delay time tD(off) 8 ns
Fall time tf 13 ns
Total gate charge (10V) Qg (10V) 8.4 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 1 nC
Single pulse avalanche energy Eas 4 mJ
Input capacitance Ciss 454 pF
Output capacitance Coss 17 pF
Reverse transfer capacitance Crss 13 pF
Reverse recovery charge Qrr 15 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking UE1
Thermal resistance junction RTH 125 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 45 K/W
Location terminal
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 16 V
Drain source leakage current IDSS 1 µA
@ VDS 80 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi null Ω

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