MMFTN138
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN138
MOSFET, SOT-23, N, 50V, 0.3A, 3.5Ω, 150°C
Minimum order quantity 3.000
Stock 606.000
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTN138
MMFTN138 Single
Type SMD
Package SOT-23
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 50 V
Drain current 25°C ID 0.3 A
On-resistance 1 RDSon1 3.5 Ω
@ ID 0.22 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 6 Ω
@ ID 0.22 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 0.36 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM 0.88 A
@ tp null µs
Threshold voltage VGSth min 0.8 V
VGSth max 1.6 V
Turn-on delay time tD(on) 2 ns
Rise time tr 18 ns
Turn-off delay time tD(off) 11 ns
Fall time tf 35 ns
Total gate charge (10V) Qg (10V) 1.1 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 0 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 20 pF
Output capacitance Coss 4 pF
Reverse transfer capacitance Crss 1 pF
Reverse recovery charge Qrr null nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking JD
Thermal resistance junction RTH 350 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 0.1 µA
@ VDS 30 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 0.26 mA/V
Intrinsic gate resistance RGi null Ω

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