MD03C090
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MD03C090
MOSFET, SOT-26 Dual, N+P, 30V, 3.7A, 0.058Ω, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MD03C090
MD03C090 Dual Series-SOT-26
Type SMD
Package SOT-26
Qualification Industrial Grade
Config Dual Series-SOT-26
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N+P
Drain source voltage VDS 30 V
Drain current 25°C ID 3.5 A
On-resistance 1 RDSon1 0.058 Ω
@ ID 1.5 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.095 Ω
@ ID 1 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1.2 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM 20 A
@ tp null µs
Threshold voltage VGSth min 1.1 V
VGSth max 2.2 V
Turn-on delay time tD(on) TBA ns
Rise time tr TBA ns
Turn-off delay time tD(off) TBA ns
Fall time tf TBA ns
Total gate charge (10V) Qg (10V) TBA nC
Total gate charge (4.5V) Qg (4.5V) TBA nC
Gate-drain charge Qgd TBA nC
Single pulse avalanche energy Eas TBA mJ
Input capacitance Ciss 157 pF
Output capacitance Coss 23 pF
Reverse transfer capacitance Crss 16 pF
Reverse recovery charge Qrr TBA nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking Type
Thermal resistance junction RTH 104 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 30 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs TBA mA/V
Intrinsic gate resistance RGi TBA Ω

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