DIW066N65
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIW066N65
MOSFET, TO-247, N, 650V, 66A, 41mΩ, 150°C
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIW066N65
DIW066N65 Single
Type Wire-lead
Package TO-247-3L
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 650 V
Drain current 25°C ID 66 A
On-resistance 1 RDSon1 0.041 Ω
@ ID 30 A
@ VGS 10 V
Drain current 100°C ID 41.5 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 416.6 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 240 A
@ tp null µs
Threshold voltage VGSth min 2.5 V
VGSth max 4.5 V
Turn-on delay time tD(on) 72 ns
Rise time tr 38 ns
Turn-off delay time tD(off) 70 ns
Fall time tf 10 ns
Total gate charge (10V) Qg (10V) 151.2 nC
Total gate charge (4.5V) Qg (4.5V) 0 nC
Gate-drain charge Qgd 51 nC
Single pulse avalanche energy Eas 2787 mJ
Input capacitance Ciss 7569 pF
Output capacitance Coss 160 pF
Reverse transfer capacitance Crss 6 pF
Reverse recovery charge Qrr 11.6 nC
Case flammability UL94-V0 Yes
Net weight mnet 6 g
Marking Marking Type
Thermal resistance junction RTH 0.3 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 35 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 1510 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 24 V
Drain source leakage current IDSS 1 µA
@ VDS 520 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 38 mA/V
Intrinsic gate resistance RGi 1.8 Ω

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