DIW038N65K
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIW038N65K Gate Protected
MOSFET, TO-247-3L, N, 650V, 38A, 65mΩ, 150°C
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIW038N65K
DIW038N65K Single Protected
Type Wire-lead
Package TO-247-3L
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 650 V
Drain current 25°C ID 38 A
On-resistance 1 RDSon1 0.065 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 24 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 192 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 160 A
@ tp 10000 µs
Threshold voltage VGSth min 2.5 V
VGSth max 4.5 V
Turn-on delay time tD(on) 74 ns
Rise time tr 48 ns
Turn-off delay time tD(off) 65 ns
Fall time tf 13 ns
Total gate charge (10V) Qg (10V) 101 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 35 nC
Single pulse avalanche energy Eas 1567 mJ
Input capacitance Ciss 4884 pF
Output capacitance Coss 103 pF
Reverse transfer capacitance Crss 4 pF
Reverse recovery charge Qrr 9 nC
Case flammability UL94-V0 Yes
Net weight mnet 6 g
Marking Marking Type
Thermal resistance junction RTH 0.65 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 40 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 24 V
Drain source leakage current IDSS 1 µA
@ VDS 520 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 36 mA/V
Intrinsic gate resistance RGi 5.2 Ω

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