DIT150N03
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIT150N03
MOSFET, TO-220AB, N, 30V, 150A, 2.3mΩ, 175°C
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIT150N03
DIT150N03 Single
Type Wire-lead
Package TO-220AB
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 30 V
Drain current 25°C ID 150 A
On-resistance 1 RDSon1 0.0023 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 105 A
On-resistance 2 RDSon2 0.004 Ω
@ ID 10 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 130 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 600 A
@ tp 10000000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 26 ns
Rise time tr 24 ns
Turn-off delay time tD(off) 91 ns
Fall time tf 39 ns
Total gate charge (10V) Qg (10V) 38 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 13 nC
Single pulse avalanche energy Eas 1700 mJ
Input capacitance Ciss 5000 pF
Output capacitance Coss 1135 pF
Reverse transfer capacitance Crss 563 pF
Reverse recovery charge Qrr 39 nC
Case flammability UL94-V0 Yes
Net weight mnet 2.2 g
Marking Marking Type
Thermal resistance junction RTH 1.15 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 30 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 32 mA/V
Intrinsic gate resistance RGi tbd Ω

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