DIT100N10
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIT100N10
MOSFET, TO-220AB, N, 100V, 100A, 9.9mΩ, 175°C
Minimum order quantity 1.000
Stock 500
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIT100N10
DIT100N10 Single
Type Wire-lead
Package TO-220AB
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 100 A
On-resistance 1 RDSon1 0.0099 Ω
@ ID 40 A
@ VGS 10 V
Drain current 100°C ID 55 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 200 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 380 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 15 ns
Rise time tr 50 ns
Turn-off delay time tD(off) 40 ns
Fall time tf 55 ns
Total gate charge (10V) Qg (10V) 85 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 28 nC
Single pulse avalanche energy Eas 800 mJ
Input capacitance Ciss 4800 pF
Output capacitance Coss 340 pF
Reverse transfer capacitance Crss 150 pF
Reverse recovery charge Qrr 53 nC
Case flammability UL94-V0 Yes
Net weight mnet 2.2 g
Marking Marking Type
Thermal resistance junction RTH 0.75 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 100 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 100 mA/V
Intrinsic gate resistance RGi tbd Ω

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