DIT095N08
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIT095N08
MOSFET, TO-220AB, N, 80V, 95A, 6.6mΩ, 175°C
Minimum order quantity 1.000
Stock 4.000
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Distributor Availability

Technical data

Article number DIT095N08
DIT095N08 Single
Type Wire-lead
Package TO-220AB
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 80 V
Drain current 25°C ID 95 A
On-resistance 1 RDSon1 0.0066
@ ID 40 A
@ VGS 10 V
Drain current 100°C ID 67 A
On-resistance 2 RDSon2 null
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 170 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 320 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 18 ns
Rise time tr 12 ns
Turn-off delay time tD(off) 56 ns
Fall time tf 12 ns
Total gate charge (10V) Qg (10V) 109 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 26 nC
Single pulse avalanche energy Eas 529 mJ
Input capacitance Ciss 6800 pF
Output capacitance Coss 350 pF
Reverse transfer capacitance Crss 260 pF
Reverse recovery charge Qrr 58 nC
Case flammability UL94-V0 Yes
Net weight mnet 2.2 g
Marking Marking Type
Thermal resistance junction RTH 0.88 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 80 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 50 mA/V
Intrinsic gate resistance RGi 0.8

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