DIT080N08-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIT080N08-AQ
MOSFET, TO-220AB, N, 80V, 80A, 4.8mΩ, 150°C, AEC-Q101
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIT080N08-AQ
DIT080N08-AQ Single
Type Wire-lead
Package TO-220AB
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 80 V
Drain current 25°C ID 80 A
On-resistance 1 RDSon1 0.0048 Ω
@ ID 50 A
@ VGS 10 V
Drain current 100°C ID 51 A
On-resistance 2 RDSon2 0.0063 Ω
@ ID 20 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 62.5 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 480 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.4 V
Turn-on delay time tD(on) 26 ns
Rise time tr 43 ns
Turn-off delay time tD(off) 23 ns
Fall time tf 8 ns
Total gate charge (10V) Qg (10V) 75 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 22 nC
Single pulse avalanche energy Eas 144 mJ
Input capacitance Ciss 3742 pF
Output capacitance Coss 698 pF
Reverse transfer capacitance Crss 34 pF
Reverse recovery charge Qrr 106 nC
Case flammability UL94-V0 Yes
Net weight mnet 2.2 g
Marking Marking 8N040
Thermal resistance junction RTH 2 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 48 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 85 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 104 mA/V
Intrinsic gate resistance RGi 1 Ω

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