DIT015N25
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIT015N25
MOSFET, TO-220AB, N, 250V, 15A, 70mΩ, 175°C
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIT015N25
DIT015N25 Single
Type Wire-lead
Package TO-220AB
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 250 V
Drain current 25°C ID 15 A
On-resistance 1 RDSon1 0.07 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 10.5 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 45 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 100 A
@ tp 10000 µs
Threshold voltage VGSth min 2.5 V
VGSth max 4.5 V
Turn-on delay time tD(on) 7 ns
Rise time tr 9 ns
Turn-off delay time tD(off) 25 ns
Fall time tf 5 ns
Total gate charge (10V) Qg (10V) 24 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 6 nC
Single pulse avalanche energy Eas 320 mJ
Input capacitance Ciss 1600 pF
Output capacitance Coss 92 pF
Reverse transfer capacitance Crss 4 pF
Reverse recovery charge Qrr 160 nC
Case flammability UL94-V0 Yes
Net weight mnet 2.2 g
Marking Marking Type
Thermal resistance junction RTH 3.3 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 250 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 15 mA/V
Intrinsic gate resistance RGi null Ω

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