DIT004N50
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIT004N50
MOSFET, TO-220AB, N, 500V, 4A, 1.7Ω, 150°C
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIT004N50
DIT004N50 Single
Type Wire-lead
Package TO-220AB
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 500 V
Drain current 25°C ID 4 A
On-resistance 1 RDSon1 1.7 Ω
@ ID 2 A
@ VGS 10 V
Drain current 100°C ID 0 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 100 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 15 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 8 ns
Rise time tr 33 ns
Turn-off delay time tD(off) 23 ns
Fall time tf 59 ns
Total gate charge (10V) Qg (10V) 8 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 5 nC
Single pulse avalanche energy Eas 6.4 mJ
Input capacitance Ciss 310 pF
Output capacitance Coss 92 pF
Reverse transfer capacitance Crss 6 pF
Reverse recovery charge Qrr 2 nC
Case flammability UL94-V0 Yes
Net weight mnet 2.2 g
Marking Marking Type
Thermal resistance junction RTH 1.25 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 62.5 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 30 V
Drain source leakage current IDSS 1 µA
@ VDS 500 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi null Ω

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