DIP050S120
IGBT (Insulated Gate Bipolar Transistors)

Product information

Product family	IGBT (Insulated Gate Bipolar Transistors) Power Switch for Inverters
Article description	DIP050S120 IGBT, TO-247Plus-3L (No Hole), N-reSonant, 1200 V, 50 A
Minimum order quantity	450
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DIP050S120

Type	Wire-lead
Package	TO-247Plus-3L
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	n/a

Collector Emitter Voltage S	VCES	1200 V
DC Collector Current 100°C	IC100	50 A
Peak Collector Current	ICM	100 A

Polarity	pol	N (reSonant)
Junction temperature	Tjmin	-40 °C
	Tjmax	175 °C
Power dissipation	Ptot	600 W
	@ TLoc	25 °C
	Location	Contact
Gate Emitter Threshold Voltage	VGEthmin	4.5 V
	VGEth	5.8 V
	VGEthmax	6.8 V
Collector Emitter Saturation Voltage	VCEsat100	2.9 V
	@ IC100	50 A
	@ VGE	15 V
Rise time	tr	41 ns
Fall time	tf	135 ns
Net weight	mnet	6 g
Marking	Marking	Type
Case flammability	UL94-V0	Yes
Thermal resistance junction	RTH	0.25 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s

No records found.