DIJ2A7N90
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIJ2A7N90
MOSFET, ITO-220AB, N, 900V, 2.7A, 3.4 Ω, 150°C
Minimum order quantity 1.000
Stock 50
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIJ2A7N90
DIJ2A7N90 Single
Type Wire-lead
Package ITO-220AB
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 900 V
Drain current 25°C ID 2.7 A
On-resistance 1 RDSon1 3.4 Ω
@ ID 1.5 A
@ VGS 10 V
Drain current 100°C ID 1.7 A
On-resistance 2 RDSon2 0 Ω
@ ID 0 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 65.7 W
@ TLoc 25 °C
Location Junction
Avalanche No
Peak drain current IDM 6.5 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 36 ns
Rise time tr 20 ns
Turn-off delay time tD(off) 25 ns
Fall time tf 115 ns
Total gate charge (10V) Qg (10V) 16.1 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 5 nC
Single pulse avalanche energy Eas 174 mJ
Input capacitance Ciss 711 pF
Output capacitance Coss 21 pF
Reverse transfer capacitance Crss 7 pF
Reverse recovery charge Qrr 1300 nC
Case flammability UL94-V0 Yes
Net weight mnet 2.8 g
Marking Marking Type
Thermal resistance junction RTH 1.9 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 50 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 30 V
Drain source leakage current IDSS 1 µA
@ VDS 900 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 2.7 mA/V
Intrinsic gate resistance RGi 4 Ω

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