DIJ021N80
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIJ021N80
MOSFET, ITO-220AB, N, 800V, 21A, 260 mΩ, 150°C
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIJ021N80
DIJ021N80 Single Protected
Type Wire-lead
Package ITO-220AB
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 800 V
Drain current 25°C ID 21.000 A
On-resistance 1 RDSon1 0.26000 Ω
@ ID 8.000 A
@ VGS 10 V
Drain current 100°C ID 12.000 A
On-resistance 2 RDSon2 0 Ω
@ ID 0 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 38.000 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 78.000 A
@ tp 10000 µs
Threshold voltage VGSth min 2.5 V
VGSth max 4.5 V
Turn-on delay time tD(on) 45.0 ns
Rise time tr 62.0 ns
Turn-off delay time tD(off) 160.0 ns
Fall time tf 34.0 ns
Total gate charge (10V) Qg (10V) 45.0 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 21 nC
Single pulse avalanche energy Eas 450.0 mJ
Input capacitance Ciss 2224 pF
Output capacitance Coss 90 pF
Reverse transfer capacitance Crss 3 pF
Reverse recovery charge Qrr 3.9 nC
Case flammability UL94-V0 Yes
Net weight mnet 2 g
Marking Marking Type
Thermal resistance junction RTH 3.6 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 80.0 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 1000 µA
@ VGS 30 V
Drain source leakage current IDSS 1 µA
@ VDS 800 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi null Ω

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