DIJ018N65
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIJ018N65
MOSFET, ITO-220AB, N, 650V, 18A, mΩ, 175°C
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Distributor Availability

Technical data

Article number DIJ018N65
DIJ018N65 Single Protected
Type Wire-lead
Package ITO-220AB
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 650 V
Drain current 25°C ID 18 A
On-resistance 1 RDSon1 0.22
@ ID 8 A
@ VGS 10 V
Drain current 100°C ID 12.7 A
On-resistance 2 RDSon2 0
@ ID 0 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 100 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 72 A
@ tp 10000 µs
Threshold voltage VGSth min 2.5 V
VGSth max 4.3 V
Turn-on delay time tD(on) 36 ns
Rise time tr 29 ns
Turn-off delay time tD(off) 68 ns
Fall time tf 21 ns
Total gate charge (10V) Qg (10V) 22 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 9.5 nC
Single pulse avalanche energy Eas 182 mJ
Input capacitance Ciss 1870 pF
Output capacitance Coss 40 pF
Reverse transfer capacitance Crss 10 pF
Reverse recovery charge Qrr 2700 nC
Case flammability UL94-V0 Yes
Net weight mnet 2 g
Marking Marking Type
Thermal resistance junction RTH 4 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 62.5 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 30 V
Drain source leakage current IDSS 1 µA
@ VDS 900 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi null

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