DI7A5N65D2K-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI7A5N65D2K-AQ Gate Protected
MOSFET, D2PAK, N, 650V, 7.5A, 0.43Ω, 150°C, AEC-Q101
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI7A5N65D2K-AQ
DI7A5N65D2K-AQ Single Protected
Type SMD
Package TO-263AB/D2PAK
Qualification AEC-Q101
Config Single Protected
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 650 V
Drain current 25°C ID 7.5 A
On-resistance 1 RDSon1 0.43 Ω
@ ID 4 A
@ VGS 10 V
Drain current 100°C ID 4.7 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 62.5 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 25 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 43 ns
Rise time tr 13 ns
Turn-off delay time tD(off) 43 ns
Fall time tf 50 ns
Total gate charge (10V) Qg (10V) 18.4 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 7 nC
Single pulse avalanche energy Eas 174 mJ
Input capacitance Ciss 722 pF
Output capacitance Coss 24 pF
Reverse transfer capacitance Crss 6 pF
Reverse recovery charge Qrr 2 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 2 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 40 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 1 µA
@ VGS 24 V
Drain source leakage current IDSS 1 µA
@ VDS 520 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS 2000 V
Forward transconductance gfs 8.6 mA/V
Intrinsic gate resistance RGi 12.3 Ω

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