DI5A6C04SQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI5A6C04SQ Complementary MOSFET
MOSFET, SO-8, N+P, 40V, 5.6A, 36mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI5A6C04SQ
DI5A6C04SQ Dual
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+P
Drain source voltage VDS 40 V
Drain current 25°C ID 5.6 A
On-resistance 1 RDSon1 0.036 Ω
@ ID 5 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.043 Ω
@ ID 4 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1.95 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM 20 A
@ tp null µs
Threshold voltage VGSth min 1.4 V
VGSth max 3 V
Turn-on delay time tD(on) 7 ns
Rise time tr 10 ns
Turn-off delay time tD(off) 15 ns
Fall time tf 9 ns
Total gate charge (10V) Qg (10V) null nC
Total gate charge (4.5V) Qg (4.5V) 5.3 nC
Gate-drain charge Qgd 2 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 640 pF
Output capacitance Coss 73 pF
Reverse transfer capacitance Crss 41 pF
Reverse recovery charge Qrr 14 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 40 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 64 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 40 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 22 mA/V
Intrinsic gate resistance RGi null Ω

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