DI3A5P06PW-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI3A5P06PW-AQ
MOSFET, PowerQFN 2x2, P, -60V, -3.6A, 106mΩ, 150°C, AEC-Q101
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI3A5P06PW-AQ
DI3A5P06PW-AQ Single
Type SMD
Package PowerQFN 2x2
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 1
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -60 V
Drain current 25°C ID -3.5 A
On-resistance 1 RDSon1 0.106 Ω
@ ID -2.5 A
@ VGS -10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.138 Ω
@ ID -2 A
@ VGS -4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1.6 W
@ TLoc 25 °C
Location Junction
Avalanche No
Peak drain current IDM -20 A
@ tp 10000 µs
Threshold voltage VGSth min -1 V
VGSth max -2.5 V
Turn-on delay time tD(on) 9 ns
Rise time tr 15 ns
Turn-off delay time tD(off) 33 ns
Fall time tf 12 ns
Total gate charge (10V) Qg (10V) 18 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 5 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 978 pF
Output capacitance Coss 51 pF
Reverse transfer capacitance Crss 39 pF
Reverse recovery charge Qrr 40 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.05 g
Marking Marking tbd
Thermal resistance junction RTH 78 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 60 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs TBA mA/V
Intrinsic gate resistance RGi TBA Ω

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