DI374N12TL
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI374N12TL
MOSFET, TOLL, N, 120V, 374A , 1.7mΩ, 175°C
Minimum order quantity 20.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI374N12TL
DI374N12TL Single
Type SMD
Package HSOF-8/TOLL
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 120 V
Drain current 25°C ID 374 A
On-resistance 1 RDSon1 0.0017 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 265 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 500 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 1496 A
@ tp 100 µs
Threshold voltage VGSth min 2.5 V
VGSth max 3.5 V
Turn-on delay time tD(on) 33 ns
Rise time tr 37 ns
Turn-off delay time tD(off) 95 ns
Fall time tf 56 ns
Total gate charge (10V) Qg (10V) 166 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 35 nC
Single pulse avalanche energy Eas 672.8 mJ
Input capacitance Ciss 11300 pF
Output capacitance Coss 2200 pF
Reverse transfer capacitance Crss 50 pF
Reverse recovery charge Qrr 235 nC
Case flammability UL94-V0 Yes
Net weight mnet 2 g
Marking Marking Type
Thermal resistance junction RTH 0.3 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 40 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 120 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 102 mA/V
Intrinsic gate resistance RGi 1.4 Ω

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