DI370N10TL-AQ
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI370N10TL-AQ
MOSFET, TOLL, N, 100V, 375A, 1.4mΩ, 175°C, AEC-Q101
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free Yes

Downloads & Links

Distributor Availability

Technical data

Article number DI370N10TL-AQ
DI370N10TL-AQ Single
Type SMD
Package HSOF-8/TOLL
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 375 A
On-resistance 1 RDSon1 0.0014 Ω
@ ID 80 A
@ VGS 10 V
Drain current 100°C ID 265 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 468.8 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 1502 A
@ tp 100 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 21 ns
Rise time tr 31 ns
Turn-off delay time tD(off) 57 ns
Fall time tf 33 ns
Total gate charge (10V) Qg (10V) 130 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 27 nC
Single pulse avalanche energy Eas 821 mJ
Input capacitance Ciss 3471 pF
Output capacitance Coss 3226 pF
Reverse transfer capacitance Crss 105 pF
Reverse recovery charge Qrr 162 nC
Case flammability UL94-V0 Yes
Net weight mnet 2 g
Marking Marking Type
Thermal resistance junction RTH 0.32 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 38 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 100 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 84 mA/V
Intrinsic gate resistance RGi 57 Ω

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample