DI350N08TL
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI350N08TL
MOSFET, TOLL, N, 80V, 350A, 175°C,
Minimum order quantity 20.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI350N08TL
DI350N08TL Single
Type SMD
Package HSOF-8/TOLL
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 80 V
Drain current 25°C ID 350 A
On-resistance 1 RDSon1 8E-5 Ω
@ ID 175 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.0008 Ω
@ ID 175 A
@ VGS 10 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 750 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 1050 A
@ tp 100 µs
Threshold voltage VGSth min 2.5 V
VGSth max 3.5 V
Turn-on delay time tD(on) 130 ns
Rise time tr 85 ns
Turn-off delay time tD(off) 335 ns
Fall time tf 100 ns
Total gate charge (10V) Qg (10V) 305 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 70 nC
Single pulse avalanche energy Eas 1473 mJ
Input capacitance Ciss 19000 pF
Output capacitance Coss 8000 pF
Reverse transfer capacitance Crss 1000 pF
Reverse recovery charge Qrr 660 nC
Case flammability UL94-V0 Yes
Net weight mnet 2 g
Marking Marking Type
Thermal resistance junction RTH 0.2 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 35 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 1 µA
@ VGS 20 V
Drain source leakage current IDSS 10 µA
@ VDS 80 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs TBA mA/V
Intrinsic gate resistance RGi 2.2 Ω

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