DI330N04D7
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI330N04D7
MOSFET, D2PAK-6L, N, 40V, 330A, 0.8mΩ, 175°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
RoHS
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI330N04D7
DI330N04D7 Single
Type SMD
Package TO-263-6L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 40 V
Drain current 25°C ID 330 A
On-resistance 1 RDSon1 0.00066 Ω
@ ID 180 A
@ VGS 10 V
Drain current 100°C ID 330 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 375 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 1400 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 27 ns
Rise time tr 15 ns
Turn-off delay time tD(off) 125 ns
Fall time tf 18 ns
Total gate charge (10V) Qg (10V) 157 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 25 nC
Single pulse avalanche energy Eas 2250 mJ
Input capacitance Ciss 12850 pF
Output capacitance Coss 4700 pF
Reverse transfer capacitance Crss 210 pF
Reverse recovery charge Qrr 240 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 0.4 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 40 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 100 mA/V
Intrinsic gate resistance RGi 1.1 Ω

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