DI315N10TL-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI315N10TL-AQ
MOSFET, TOLL, N, 100V, 315A, 1.4 mΩ, 175°C , AEC-Q101
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI315N10TL-AQ
DI315N10TL-AQ Single
Type SMD
Package HSOF-8/TOLL
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 315 A
On-resistance 1 RDSon1 0.0014 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 222 A
On-resistance 2 RDSon2 0 Ω
@ ID 0 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 277 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 1260 A
@ tp 100 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 41 ns
Rise time tr 69 ns
Turn-off delay time tD(off) 157 ns
Fall time tf 92 ns
Total gate charge (10V) Qg (10V) 217 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 57 nC
Single pulse avalanche energy Eas 1944 mJ
Input capacitance Ciss 13360 pF
Output capacitance Coss 5113 pF
Reverse transfer capacitance Crss 122 pF
Reverse recovery charge Qrr 374 nC
Case flammability UL94-V0 Yes
Net weight mnet 2 g
Marking Marking Type
Thermal resistance junction RTH 0.54 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 35 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 100 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs TBD mA/V
Intrinsic gate resistance RGi 3.8 Ω

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