DI2A7N70D1K
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI2A7N70D1K Gate Protected
MOSFET, DPAK, N, 700V, 2.7A, 1.6Ω, 150°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Downloads & Links

Distributor Availability

Technical data

Article number DI2A7N70D1K
DI2A7N70D1K Single Protected
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single Protected
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 700 V
Drain current 25°C ID 2.7 A
On-resistance 1 RDSon1 1.6 Ω
@ ID 1 A
@ VGS 10 V
Drain current 100°C ID 1.7 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 34.4 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 6 A
@ tp 10000 µs
Threshold voltage VGSth min 2.5 V
VGSth max 3.5 V
Turn-on delay time tD(on) 9 ns
Rise time tr 11 ns
Turn-off delay time tD(off) 19 ns
Fall time tf 86 ns
Total gate charge (10V) Qg (10V) 5.8 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 2 nC
Single pulse avalanche energy Eas 19.3 mJ
Input capacitance Ciss 209 pF
Output capacitance Coss 12 pF
Reverse transfer capacitance Crss 5 pF
Reverse recovery charge Qrr 498 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 3.6 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 36 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 1 µA
@ VGS 16 V
Drain source leakage current IDSS 1 µA
@ VDS 560 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS 2000 V
Forward transconductance gfs 82 mA/V
Intrinsic gate resistance RGi 20 Ω

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample