DI260N04PQ
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI260N04PQ
MOSFET, PowerQFN 5x6, N, 40V, 260A, 0.8mΩ, 175°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Downloads & Links

Distributor Availability

Technical data

Article number DI260N04PQ
DI260N04PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Commercial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 40 V
Drain current 25°C ID 260 A
On-resistance 1 RDSon1 0.0008 Ω
@ ID 30 A
@ VGS 10 V
Drain current 100°C ID 183 A
On-resistance 2 RDSon2 0.0012 Ω
@ ID 30 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 79 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 1040 A
@ tp 10000 µs
Threshold voltage VGSth min 1 V
VGSth max 2 V
Turn-on delay time tD(on) 0 ns
Rise time tr 0 ns
Turn-off delay time tD(off) 0 ns
Fall time tf 0 ns
Total gate charge (10V) Qg (10V) 0 nC
Total gate charge (4.5V) Qg (4.5V) TBA nC
Gate-drain charge Qgd TBA nC
Single pulse avalanche energy Eas TBA mJ
Input capacitance Ciss TBA pF
Output capacitance Coss 6994 pF
Reverse transfer capacitance Crss 215 pF
Reverse recovery charge Qrr 0 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 1.9 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 45 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 40 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs TBA mA/V
Intrinsic gate resistance RGi TBA Ω

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample