DI2579N
Bipolar Transistors

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Product information

Product family Bipolar Transistors
Control and signal processing
Article description DI2579N
BJT, SOT-223, 700V, 1000mA, NPN, 1.25W, 150°C
Minimum order quantity 4.000
Stock 4.000
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI2579N
DI2579N Single
Type SMD
Package SOT-223
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
Collector Emitter voltage VCEO 700 V
DC Collector current IC 2000 mA
Polarity pol NPN
Power dissipation Ptot 1.25 W
@ TLoc 25 °C
Location ambient
DC current gain hfe 20
@ VCE 5 V
@ IC 350 mA
DC current gain (b) hfe null
@ VCE null V
@ IC null mA
DC current gain (c) hfe null
@ VCE null V
@ IC null mA
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Peak Collector Current ICM 2 A
Peak Base current IBM 1000 mA
Collector Base voltage VCBO null V
Emitter Base voltage VEBO 9 V
Collector saturation voltage VCEsat 1000 mV
@ IC 350 mA
@ IB 50 mA
Base saturation voltage VBEsat null V
@ IC null mA
@ IB null mA
Base Emitter voltage VBE null V
Collector Base cutoff current ICBO null nA
Emitter Base cutoff current IEBO null nA
Gain bandwidth product ft 0 MHz
@ IC 0 mA
@ VCE 0 V
@ f 0 MHz
Marking Marking Type
Thermal resistance junction RTH 80 K/W
Location ambient
Thermal resistance junction (b) RTH null K/W
Location null
Net weight mnet 0.04 g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Collector Base capacitance CCBO null pF
@ VCB null V
Storage temperature Tsmin -55 °C
Tsmax 150 °C

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