DI1A5N60D1
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI1A5N60D1
MOSFET, DPAK, N, 600V, 1.5A, 8Ω, 150°C
Minimum order quantity 2.500
Stock 1.420.000
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI1A5N60D1
DI1A5N60D1 Single Protected
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single Protected
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 600 V
Drain current 25°C ID 1.5 A
On-resistance 1 RDSon1 8 Ω
@ ID 0.75 A
@ VGS 10 V
Drain current 100°C ID 0.97 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 25 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 6 A
@ tp null µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 3 ns
Rise time tr 12 ns
Turn-off delay time tD(off) 17 ns
Fall time tf 7 ns
Total gate charge (10V) Qg (10V) 7.9 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 5 nC
Single pulse avalanche energy Eas 30 mJ
Input capacitance Ciss 156 pF
Output capacitance Coss 24 pF
Reverse transfer capacitance Crss 22 pF
Reverse recovery charge Qrr 230 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 5 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 100 K/W
Location ambient
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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