DI150N03PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI150N03PQ
MOSFET, PowerQFN 5x6, N, 30V, 150A, 1.8mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH not declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI150N03PQ
DI150N03PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 30 V
Drain current 25°C ID 150 A
On-resistance 1 RDSon1 0.0018 Ω
@ ID 30 A
@ VGS 10 V
Drain current 100°C ID 70 A
On-resistance 2 RDSon2 0.0025 Ω
@ ID 15 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 86 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 400 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 43 ns
Rise time tr 71 ns
Turn-off delay time tD(off) 42 ns
Fall time tf 12 ns
Total gate charge (10V) Qg (10V) 163 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 37 nC
Single pulse avalanche energy Eas 150 mJ
Input capacitance Ciss 7460 pF
Output capacitance Coss 890 pF
Reverse transfer capacitance Crss 730 pF
Reverse recovery charge Qrr 15 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 1.5 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 30 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 61 mA/V
Intrinsic gate resistance RGi 0.5 Ω

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