DI145N20TL
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI145N20TL
MOSFET, TOLL, N, 200V, 145A, 6.6mOhm, 150°C
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI145N20TL
DI145N20TL Single
Type SMD
Package HSOF-8/TOLL
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 200 V
Drain current 25°C ID 145 A
On-resistance 1 RDSon1 0.0066 Ω
@ ID 30 A
@ VGS 10 V
Drain current 100°C ID 0 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 312 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 435 A
@ tp null µs
Threshold voltage VGSth min 2.2 V
VGSth max 4.2 V
Turn-on delay time tD(on) 16 ns
Rise time tr 31 ns
Turn-off delay time tD(off) 155 ns
Fall time tf 5 ns
Total gate charge (10V) Qg (10V) 121 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 24 nC
Single pulse avalanche energy Eas 700 mJ
Input capacitance Ciss 6788 pF
Output capacitance Coss 236 pF
Reverse transfer capacitance Crss 38 pF
Reverse recovery charge Qrr 900 nC
Case flammability UL94-V0 Yes
Net weight mnet 2 g
Marking Marking Type
Thermal resistance junction RTH 0.4 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 62 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.5 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 200 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi null Ω

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