DI120SIC089D7
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DI120SIC089D7 1200V SiC MOSFET
SiC MOSFET, TO-263-7L, N, 46A, 1200V, 89mΩ, 175°C
Minimum order quantity 800
Stock 400
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI120SIC089D7
DI120SIC089D7 Single
Type SMD
Package TO-263-7L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
Drain source voltage VDS 1200 V
Drain current 25°C ID 24 A
On-resistance 1 RDSon1 0.081 Ω
@ ID 12 A
@ VGS 18 V
On-resistance 2 RDSon2 0.09 Ω
@ ID 20 A
@ VGS 18 V
Polarity pol N
ESD protection ESD protected No
Gate source voltage DC VGSS 18 V
Gate source voltage ESD VGSS null V
Drain current 100°C ID 17 A
Peak drain current IDM 52 A
@ tp null µs
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 93 W
@ TLoc 25 °C
Location Junction
Threshold voltage VGSth min 2.8 V
VGSth max 4.8 V
Turn-on delay time tD(on) 14 ns
Rise time tr 10 ns
Turn-off delay time tD(off) 22 ns
Fall time tf 9 ns
Total switching energy Etotal 0.15 mJ
Total gate charge (4.5V) Qg (4.5V) null nC
Total gate charge (10V) Qg (10V) 1.3 nC
Gate-drain charge Qgd 36 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 1550 pF
Output capacitance Coss 56 pF
Reverse transfer capacitance Crss 5 pF
Reverse recovery charge Qrr 245 nC
Avalanche No
Net weight mnet 0.32 g
Marking Marking Type
Case flammability UL94-V0 Yes
Thermal resistance junction RTH 0.57 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH TBA K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s

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