DI120SIC089D7-AQ | SiC MOSFET used in electronic Fuse for Data Centres

The DI120SIC089D7-AQ by Diotec Semiconductor, with its headquarters in Germany, offers a high-performance 1200 V Silicon Carbide (SiC) MOSFET designed for demanding power conversion applications. Featuring a maximum on-state resistance of 89 mΩ, a drain current rating of 46 A and AEC-Q101 qualification, the device combines fast switching characteristics with a compact TO-263-7L package and dedicated Kelvin-Source connection.

Electronic Fuse for Modern Data Centres

The rapid expansion of cloud computing, artificial intelligence and high-performance computing is increasing the demand for efficient reliable data centre power infrastructure. This increase in demand drives the adoption of 800 V DC power architectures, similar to those employed in automotive battery systems. This convergence in power distribution requirements creates an opportunity for the DI120SIC089D7-AQ to be employed as a protective measure in both, automotive and data centre applications.

The SiC MOSFET, DI120SIC089D7-AQ, can serve as an electronically controlled high-voltage switch in an E-fuse architecture. In case an anomaly such as overcurrent or short circuit is detected, the DI120SIC089D7-AQ rapidly disconnects the affected circuit from the high voltage bus.

Compared with conventional fuses, an E-Fuse enables actively controlled fault interruption and can provide faster fault isolation, while supporting additional functions such as diagnostics, programmable protection thresholds, and controlled switching.

Apart from automotive and data centres, the DI120SIC089D7-AQ is suitable for a variety of applications including high-voltage DC/DC converters, power factor correction stages and power conversion systems used in uninterruptible power supplies (UPS).

Kelvin-Source Connection for Controlled Switching Performance

A key feature of the DI120SIC089D7-AQ is its TO-263-7L package, also known as D2PAK-7L, which incorporates a dedicated Kelvin-Source connection.

In high-frequency switching applications, parasitic inductance in the source connection can negatively affect switching behavior and increase voltage disturbances. The separate Kelvin-Source terminal provides a more direct reference connection for the gate driver, reducing the influence of common-source inductance on the gate-drive loop.

This supports more controlled switching transitions and can help reduce switching losses when combined with an appropriately designed gate driver and PCB layout.

SiC Technology for High-Efficiency Power Electronics

Diotec’s DI120SIC089D7-AQ features a maximum on-state resistance of 89 mΩ at 25°C under specified test conditions, helping designers manage conduction losses in high-current switching stages.

Its fast-switching characteristics, with a typical turn-on delay of 14 ns and turn-off delay of 22 ns under defined measurement conditions, support applications requiring rapid switching transitions.

These characteristics can support the development of power converters with higher switching frequencies, potentially enabling smaller magnetic components and more compact power supply designs. The achievable efficiency and power density depend on the complete converter topology and operating conditions.

Technical Features and Specifications

• Drain-source voltage (VDSS): 1200 V
• Drain current (ID): 46 A at 25 °C
• Maximum on-state resistance (RDS(on)): 89 mΩ
• Maximum junction temperature: 175 °C
• Typical turn-on delay: 14 ns
• Typical turn-off delay: 22 ns
• Typical total switching energy: 0.15 mJ under specified test conditions
• Package: TO-263-7L (D2PAK-7L)
• Dedicated Kelvin-Source connection
• AEC-Q101 qualified

Reliable Semiconductor Solutions from Diotec

In addition to its electrical performance, the DI120SIC089D7-AQ is AEC-Q101 qualified, according to established automotive semiconductor requirements. Although this qualification is primarily associated with automotive electronics, it can also be a relevant selection criterion for engineers and technical buyers developing demanding industrial and data centre power systems.

With the DI120SIC089D7-AQ, Diotec Semiconductor strengthens its portfolio of Silicon Carbide power semiconductors, providing manufacturers of power electronic systems with a compact solution for high-voltage, high-efficiency switching applications.

As data centre power requirements continue to grow, advanced semiconductor technologies such as SiC continue to play an important role in reducing conversion losses, improving power density and supporting more energy-efficient infrastructure.