DI120SIC026D7
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DI120SIC026D7 1200V SiC MOSFET
SiC MOSFET, TO-263-7L, N, 117A, 1200V, 26mΩ, 175°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI120SIC026D7
DI120SIC026D7 Single
Type Wire-lead
Package TO-263-7L
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
Drain source voltage VDS 1200 V
Drain current 25°C ID 117 A
On-resistance 1 RDSon1 0.026 Ω
@ ID 50 A
@ VGS 18 V
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Polarity pol N
ESD protection ESD protected No
Gate source voltage DC VGSS 18 V
Gate source voltage ESD VGSS null V
Drain current 100°C ID 83 A
Peak drain current IDM 297 A
@ tp null µs
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 535 W
@ TLoc 25 °C
Location Contact
Threshold voltage VGSth min 1.9 V
VGSth max 4 V
Turn-on delay time tD(on) 17 ns
Rise time tr 32 ns
Turn-off delay time tD(off) 45 ns
Fall time tf 14 ns
Total switching energy Etotal 1.92 mJ
Total gate charge (4.5V) Qg (4.5V) null nC
Total gate charge (10V) Qg (10V) 64 nC
Gate-drain charge Qgd 182 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 5990 pF
Output capacitance Coss 220 pF
Reverse transfer capacitance Crss 19 pF
Reverse recovery charge Qrr 639 nC
Avalanche No
Net weight mnet 0.32 g
Marking Marking Type
Case flammability UL94-V0 Yes
Thermal resistance junction RTH 0.288 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH TBA K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s

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