DI117N04PQ-AQ
MOSFETs (Field Effect Transistors)
Product information
| Product family | MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection |
|---|---|
| Article description |
DI117N04PQ-AQ
MOSFET, PowerQFN 5x6, N, 40V, 117A, 3.3 mΩ, AEC-Q101 |
| Minimum order quantity | 5.000 |
| Stock | 0 |
| Customs Tariff Number | 85412900 |
| RoHS | compliant with exemption 7(a)-I |
| REACH | declarable |
| Lead free | No |
| Halogen free | No |
Downloads & Links
Distributor Availability
Technical data
| Article number | DI117N04PQ-AQ | |
|---|---|---|
|
||
| Type | SMD | |
| Package | PowerQFN 5x6 | |
| Qualification | AEC-Q101 | |
| Config | Single | |
| Life Cycle | engineering sample | |
| ESD sensitive | No | |
| MSL | 3 | |
| ESD protection | ESD protected | No |
| Polarity | pol | N |
| Drain source voltage | VDS | 40 V |
| Drain current 25°C | ID | 117.000 A |
| On-resistance 1 | RDSon1 | 0.00330 Ω |
| @ ID | 20.000 A | |
| @ VGS | 10 V | |
| Drain current 100°C | ID | 83.000 A |
| On-resistance 2 | RDSon2 | 0.00000 Ω |
| @ ID | 0.000 A | |
| @ VGS | 0 V | |
| Junction temperature | Tjmin | -55 °C |
| Tjmax | 175 °C | |
| Power dissipation | Ptot | 75.000 W |
| @ TLoc | 25 °C | |
| Location | Junction | |
| Avalanche | No | |
| Peak drain current | IDM | 387.000 A |
| @ tp | ||
| Threshold voltage | VGSth min | 2.0 V |
| VGSth max | 4.0 V | |
| Turn-on delay time | tD(on) | 4 ns |
| Rise time | tr | 4 ns |
| Turn-off delay time | tD(off) | 18 ns |
| Fall time | tf | 9 ns |
| Total gate charge (10V) | Qg (10V) | 18.0 nC |
| Total gate charge (4.5V) | Qg (4.5V) | 0.0 nC |
| Gate-drain charge | Qgd | 2.5 nC |
| Single pulse avalanche energy | Eas | 65.0 mJ |
| Input capacitance | Ciss | 1532 pF |
| Output capacitance | Coss | 855 pF |
| Reverse transfer capacitance | Crss | 50 pF |
| Reverse recovery charge | Qrr | 19.0 nC |
| Case flammability | UL94-V0 | No |
| Net weight | mnet | |
| Marking | Marking | |
| Thermal resistance junction | RTH | |
| Location | ||
| UL recognized | UL-Recognition | |
| Thermal resistance junction (b) | RTH | |
| Location | ||
| Storage temperature | Tsmin | |
| Tsmax | ||
| Solder & Assembly | Solder & Assembly | |
| Gate source leakage current | IGSS | |
| @ VGS | ||
| Drain source leakage current | IDSS | |
| @ VDS | ||
| Gate source voltage DC | VGSS | |
| Gate source voltage ESD | VGSS | |
| Forward transconductance | gfs | |
| Intrinsic gate resistance | RGi | |
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Application Reference Diagrams
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