DI110N15PQ-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI110N15PQ-AQ
MOSFET, PowerQFN 5x6, N, 150V, 110A, 11.7mΩ, 150°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI110N15PQ-AQ
DI110N15PQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 150 V
Drain current 25°C ID 110 A
On-resistance 1 RDSon1 0.0117 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 34 A
On-resistance 2 RDSon2 0.015 Ω
@ ID 20 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 62 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 145 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 25 ns
Rise time tr 15 ns
Turn-off delay time tD(off) 23 ns
Fall time tf 6 ns
Total gate charge (10V) Qg (10V) 69 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 4 nC
Single pulse avalanche energy Eas 158 mJ
Input capacitance Ciss 3700 pF
Output capacitance Coss 350 pF
Reverse transfer capacitance Crss 30 pF
Reverse recovery charge Qrr 140 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 2 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 120 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 58 mA/V
Intrinsic gate resistance RGi 1.2 Ω

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