DI110N04PQ-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI110N04PQ-AQ
MOSFET, PowerQFN 5x6, N, 40V, 100A, 2.5mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI110N04PQ-AQ
DI110N04PQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 40 V
Drain current 25°C ID 100 A
On-resistance 1 RDSon1 0.0025 Ω
@ ID 23 A
@ VGS 10 V
Drain current 100°C ID 70 A
On-resistance 2 RDSon2 0.0038 Ω
@ ID 18 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 55.5 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 450 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 19 ns
Rise time tr 42 ns
Turn-off delay time tD(off) 17 ns
Fall time tf 7 ns
Total gate charge (10V) Qg (10V) 48 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 7 nC
Single pulse avalanche energy Eas 123.5 mJ
Input capacitance Ciss 2980 pF
Output capacitance Coss 550 pF
Reverse transfer capacitance Crss 35 pF
Reverse recovery charge Qrr 18 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 2.7 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 45 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 32 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 27 mA/V
Intrinsic gate resistance RGi 0.7 Ω

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