DI0A4N45SQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI0A4N45SQ2
MOSFET, SO-8, N+N, 450V, 0.4A, 4.5Ω, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI0A4N45SQ2
DI0A4N45SQ2 Dual
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+N
Drain source voltage VDS 450 V
Drain current 25°C ID 0.4 A
On-resistance 1 RDSon1 4.5 Ω
@ ID 0.500 A
@ VGS 10 V
Drain current 100°C ID 0.250 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 2 W
@ TLoc 25 °C
Location ambient
Avalanche Yes
Peak drain current IDM 1.6 A
@ tp 100 µs
Threshold voltage VGSth min 2.3 V
VGSth max 3.7 V
Turn-on delay time tD(on) 7 ns
Rise time tr 4 ns
Turn-off delay time tD(off) 9 ns
Fall time tf 12 ns
Total gate charge (10V) Qg (10V) 7 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas 30.0 mJ
Input capacitance Ciss 160 pF
Output capacitance Coss 28 pF
Reverse transfer capacitance Crss 5 pF
Reverse recovery charge Qrr 530 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 62.5 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 30 V
Drain source leakage current IDSS 0 µA
@ VDS 450 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 1.1 mA/V
Intrinsic gate resistance RGi null Ω

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