DI088N10PQ-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI088N10PQ-AQ
MOSFET, PowerQFN 5x6, N, 100V, 88A, 5.4mΩ, 175°C AEC-Q101
Minimum order quantity 5.000
Stock 10.000
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI088N10PQ-AQ
DI088N10PQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 88 A
On-resistance 1 RDSon1 0.0054 Ω
@ ID 30 A
@ VGS 10 V
Drain current 100°C ID 62 A
On-resistance 2 RDSon2 0.0046 Ω
@ ID 30 A
@ VGS 10 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 75 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 360 A
@ tp null µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 21 ns
Rise time tr 32 ns
Turn-off delay time tD(off) 14 ns
Fall time tf 5 ns
Total gate charge (10V) Qg (10V) 45 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 10 nC
Single pulse avalanche energy Eas 248 mJ
Input capacitance Ciss 2769 pF
Output capacitance Coss 1297 pF
Reverse transfer capacitance Crss 19 pF
Reverse recovery charge Qrr 82 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 2 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 45 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 100 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 64 mA/V
Intrinsic gate resistance RGi 0.5 Ω

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