DI075N08PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI075N08PQ
MOSFET, PowerQFN 5x6, N, 80V, 75A, 4mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI075N08PQ
DI075N08PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 80 V
Drain current 25°C ID 75 A
On-resistance 1 RDSon1 0.004 Ω
@ ID 55 A
@ VGS 10 V
Drain current 100°C ID 47 A
On-resistance 2 RDSon2 0.0042 Ω
@ ID 20 A
@ VGS 7 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 45 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 350 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 36 ns
Rise time tr 50 ns
Turn-off delay time tD(off) 29 ns
Fall time tf 11 ns
Total gate charge (10V) Qg (10V) 89 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 20 nC
Single pulse avalanche energy Eas 91.2 mJ
Input capacitance Ciss 5500 pF
Output capacitance Coss 833 pF
Reverse transfer capacitance Crss 63 pF
Reverse recovery charge Qrr 99 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking 508N040
Thermal resistance junction RTH 2.78 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 0.8 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 46.1 mA/V
Intrinsic gate resistance RGi 1.1 Ω

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