DI074N06D1K-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI074N06D1K-Q Gate Protected
MOSFET, DPAK, N, 65V, 74A, 5.8mΩ, 150°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI074N06D1K-Q
DI074N06D1K-Q Single Protected
Type SMD
Package TO-252AA/D-PAK
Qualification AEC-Q compliant
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 65 V
Drain current 25°C ID 74 A
On-resistance 1 RDSon1 0.0058 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 47 A
On-resistance 2 RDSon2 0.0094 Ω
@ ID 10 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 56.8 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 300 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 14 ns
Rise time tr 25 ns
Turn-off delay time tD(off) 25 ns
Fall time tf 13 ns
Total gate charge (10V) Qg (10V) 31 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 8 nC
Single pulse avalanche energy Eas 5 mJ
Input capacitance Ciss 1691 pF
Output capacitance Coss 604 pF
Reverse transfer capacitance Crss 37 pF
Reverse recovery charge Qrr 16 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking 6N055
Thermal resistance junction RTH 2.2 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 35 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 52 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS 2000 V
Forward transconductance gfs 37 mA/V
Intrinsic gate resistance RGi 2.7 Ω

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