DI065SIC020TL
SiC MOSFETs

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DI065SIC020TL
SiC MOSFET, TOLL, N, 140A, 650V, 20mΩ, 175°C
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

Distributor Availability

Technical data

Article number DI065SIC020TL
DI065SIC020TL Single
Type SMD
Package HSOF-8/TOLL
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
Drain source voltage VDS 650 V
Drain current 25°C ID 140 A
On-resistance 1 RDSon1 0.02
@ ID 75 A
@ VGS 18 V
On-resistance 2 RDSon2 null
@ ID null A
@ VGS null V
Polarity pol N
ESD protection ESD protected No
Gate source voltage DC VGSS 18 V
Gate source voltage ESD VGSS null V
Drain current 100°C ID 98 A
Peak drain current IDM 600 A
@ tp null µs
Junction temperature Tjmin -40 °C
Tjmax 175 °C
Power dissipation Ptot 288 W
@ TLoc 25 °C
Location Contact
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 49 ns
Rise time tr 39 ns
Turn-off delay time tD(off) 65 ns
Fall time tf 17 ns
Total switching energy Etotal 2.03 mJ
Total gate charge (4.5V) Qg (4.5V) null nC
Total gate charge (10V) Qg (10V) 290 nC
Gate-drain charge Qgd 77 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 6900 pF
Output capacitance Coss 290 pF
Reverse transfer capacitance Crss 25 pF
Reverse recovery charge Qrr 940 nC
Avalanche No
Net weight mnet 2 g
Marking Marking Type
Case flammability UL94-V0 Yes
Thermal resistance junction RTH 0.52 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 35 K/W
Location ambient
Storage temperature Tsmin -40 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s

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